(China (Mainland))
Product Summary
The BLW86 is a HF/VHF power transistor. N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The BLW86 is resistance stabilized and is guaranteed to withstand severe load mismatch conditions.
Parametrics
BLW86 absolute maximum ratings: (1)Collector-emitter voltage (VBE = 0) peak value, VCESM max.: 65 V; (2)Collector-emitter voltage (open base), VCEO max.: 36 V; (3)Emitter-base voltage (open-collector), VEBO max.: 4 V; (4)Collector current (average), IC(AV) max.: 4 A; (5)Collector current (peak value); f > 1 MHz, ICM max.: 12 A; (6)R.F. power dissipation (f > 1 MHz); Tmb = 25 ℃, Prf max.: 105 W; (7)Storage temperature, Tstg: -65 to + 150 ℃; (8)Operating junction temperature, Tj max.: 200 ℃.
Features
BLW86 features: (1)Collector-emitter breakdown voltage VBE = 0; IC = 25mA: V(BR)CES > 65 V; (2)Collector-emitter breakdown voltage open base; IC = 100mA: V(BR)CEO > 36V; (3)Emitter-base breakdown voltage open collector; IE = 10mA: V(BR)EBO > 4V; (4)Collector cut-off current VBE = 0; VCE = 36V: ICES < 10mA; (5)Second breakdown energy; L = 25mH; f = 50Hz open base RBE = 10Ω,D.C. current gain, IC = 2,5A; VCE = 5V: ESBO > 8mJ; (6)D.C. current gain ratio of matched devices, IC = 2,5A; VCE = 5V: hFE1/hFE2 < 1,2; (7)Collector-emitter saturation voltage, IC = 7,5A; IB = 1,5A: VCEsat typ. 1,5V; (8)Transition frequency at f = 100MHz: -IE = 2,5A; VCB = 28V: fT typ. 570MHz; -IE = 7,5A; VCB = 28V: fT typ. 570MHz; (9)Collector capacitance at f = 1MHz,IE = Ie = 0; VCB = 28V: Cc typ. 82pF; (10)Feedback capacitance at f = 1MHz, IC = 100mA; VCE = 28V Cre typ. 54pF; (11)Collector-flange capacitance: Ccf typ. 2pF.
Diagrams
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 BLW86 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLW86 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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