(China (Mainland))
Product Summary
The IXTH67N10 is a MegaMOSFET. The applications of the IXTH75N10 include switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies (UPS), DC choppers.
Parametrics
IXTH67N10 absolute maximum ratings: (1)TJ= 25℃ to 150℃, VDSS: 100V; TJ= 25℃ to 150℃; RGS= 1 MΩ, VDGR: 100V; (2)Continuous, VGS: ±20V; Transient, VGSM: ±30V; (3)TC= 25℃, ID25: 67A; TC= 25℃, pulse width limited by TJM, IDM: 268A; (4)TC= 25℃, PD: 300 W; (5)TJ: -55 to +150℃; TJM: 150℃; Tstg: -55 to +150℃; (6)Mounting torque, Md: 1.13/10 Nm/lb.in.; (7)Weight: TO-204= 18g, TO-247= 6g; (8)Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s: 300℃.
Features
IXTH67N10 features: (1)International standard packages; (2)Low RDS (on) HDMOSTM process; (3)Rugged polysilicon gate cell structure; (4)Low package inductance (< 5 nH) easy to drive and to protect; (5)Fast switching times.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 IXTH67N10 |
Ixys |
MOSFET 67 Amps 100V 0.025 Rds |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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Other |
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Data Sheet |
Negotiable |
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Data Sheet |
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IXTH 30N60P |
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Data Sheet |
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IXTH/IXTM 6 N80 |
Other |
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Data Sheet |
Negotiable |
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Other |
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Data Sheet |
Negotiable |
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IXTH02N250 |
Ixys |
MOSFET High Voltage Power MOSFET; 2500V, 0.2A |
Data Sheet |
Negotiable |
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