Product Summary
The BLW98 is an UHF linear power transistor. N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems.
Parametrics
BLW98 absolute maximum ratings: (1)Collector-emitter voltage (peak value); VBE = 0 VCESM max.: 50 V; open base, VCEO max.: 27 V; (2)Emitter-base voltage (open collector), VEBO max.: 3,5 V; (3)Collector current,d.c., IC max.: 2 A; (peak value); f > 1 MHz, ICM max.: 4 A; (4)Total power dissipation at Th = 70℃,Ptot max.: 21,5 W; (5)Storage temperature, Tstg: -65 to +150℃; (6)Operating junction temperature, Tj max.: 200℃.
Features
BLW98 features: (1)Diffused emitter ballasting resistors for an optimum temperature profile; (2)Gold sandwich metallization ensures excellent reliability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BLW98 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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BLW90 |
Other |
Data Sheet |
Negotiable |
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BLW96 |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
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BLW96/01,112 |
NXP Semiconductors |
Transistors RF Bipolar Power Dual N-CH 340W 10mA |
Data Sheet |
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BLW97 |
Other |
Data Sheet |
Negotiable |
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BLW98 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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