Product Summary
The FF200R12KT4 is an IGBT module with fast trench/fieldstop IGBT4 and optimized EmCon diode.
Parametrics
FF200R12KT4 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)DC-collector current: 200A; (3)repetitive peak collector current: 400A; (4)total power dissipation: 1100W; (5)gate-emitter peak voltage: ±20V.
Features
FF200R12KT4 features: (1)collector-emitter voltage: 1200V; (2)DC-collector current: 320A.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FF200R12KT4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 320A |
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Image | Part No | Mfg | Description | Pricing (USD) |
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FF200R06KE3 |
Infineon Technologies |
IGBT Modules N-CH 600V 260A |
Data Sheet |
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FF200R06ME3 |
Infineon Technologies |
IGBT Modules IGBT 600V 200A |
Data Sheet |
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FF200R06YE3 |
Infineon Technologies |
IGBT Modules IGBT 600V 200A |
Data Sheet |
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FF200R06YE3ENG |
Infineon Technologies |
IGBT Modules |
Data Sheet |
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FF200R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 200A DUAL |
Data Sheet |
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FF200R12KE3_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 295A |
Data Sheet |
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