(China (Mainland))
Product Summary
The SD1476-1 is a RF & microwave transistor TV/linear application. The SD1476-1 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistor for high linearity Class AB operation in VHF and Band I television transmitters and transposers.
Parametrics
SD1476-1 absolute maximum ratings: (1)Collector-Base Voltage, VCBO: 70V; (2)Collector-Emitter Voltage, VCEO: 40V; (3)Emitter-Base Voltage, VEBO: 4.0V; (4)Device Current, IC: 25A; (5)Power Dissipation, PDISS: 430W; (6)Junction Temperature, TJ: +200℃; (7)Storage Temperature, TSTG: -50 to +150℃.
Features
SD1476-1 features: (1)55 - 88 MHz; (2)32 Volts; (3)COMMON EMITTER; (4)Gold metallization; (5)Internal input matching; (6)Class AB push pulL; (7)High saturated power capability; (8)Diffused emitter ballast resistors; (9)Designed for high power linear operation; (10)Pout= 240W min. with 12.0 dB gain.
Diagrams
 |
 SD1400 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
SD1400A |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
SD1407 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
|
|
||||||||||||
|
SD1407-16 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN 28.0V 30MHz |
Data Sheet |
Negotiable |
|
||||||||||||
|
SD1409 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
SD140P |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
