Product Summary
The SD1476-1 is a RF & microwave transistor TV/linear application. The SD1476-1 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistor for high linearity Class AB operation in VHF and Band I television transmitters and transposers.
Parametrics
SD1476-1 absolute maximum ratings: (1)Collector-Base Voltage, VCBO: 70V; (2)Collector-Emitter Voltage, VCEO: 40V; (3)Emitter-Base Voltage, VEBO: 4.0V; (4)Device Current, IC: 25A; (5)Power Dissipation, PDISS: 430W; (6)Junction Temperature, TJ: +200℃; (7)Storage Temperature, TSTG: -50 to +150℃.
Features
SD1476-1 features: (1)55 - 88 MHz; (2)32 Volts; (3)COMMON EMITTER; (4)Gold metallization; (5)Internal input matching; (6)Class AB push pulL; (7)High saturated power capability; (8)Diffused emitter ballast resistors; (9)Designed for high power linear operation; (10)Pout= 240W min. with 12.0 dB gain.
Diagrams
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![]() Advanced Semiconductor, Inc. |
![]() Transistors RF Bipolar Power RF Transistor |
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![]() STMicroelectronics |
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![]() Other |
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![]() Negotiable |
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