Product Summary

The MRF581A is a RF & microwave discrete low power transistor, designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Parametrics

MRF581A absolute maximum ratings: (1)Low noise - 2.5 dB at 500 MHZ; (2)High gain, gain at optimum noise figure= 15.5 dB at 500 MHz; (3)Ftau - 5.0 GHz at 10v, 75mA; (4)Cost effective macrox package.

Features

MRF581A features: (1)Collector-emitter voltage, VCEO: 15V; (2)Collector-base voltage, VCBO: 30V; (3)Emitter-base voltage, VEBO: 2.5V; (4)Collector current, IC: 200mA.

Diagrams

MRF581A circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF581A
MRF581A
Advanced Semiconductor, Inc.
Transistors RF Bipolar Small Signal RF Transistor
Data Sheet
0-1: $1.35
1-10: $1.13
10-25: $1.01
25-50: $0.90
MRF581AG
MRF581AG

TRANS RF NPN 5GHZ 15V MACR0 X
Data Sheet
0-1: $1.78
1-10: $1.61
10-25: $1.44
25-100: $1.29
100-250: $1.15
250-500: $1.01
500-1000: $0.83
1000-2500: $0.78
2500-5000: $0.75