Product Summary
The 2N6439 is an NPN silicon RF power transistor. It is designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range.
Parametrics
2N6439 absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 33 Vdc; (2)Collector–Base Voltage, VCBO: 60 Vdc; (3)Emitter–Base Voltage, VEBO: 4.0 Vdc; (4)Total Device Dissipation, PD: 146W at TC = 25℃; 0.83W/℃ when Derate above 25℃; (5)Storage Temperature Range, Tstg: –65 to +200℃.
Features
2N6439 features: (1)Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.8 dB @ 400 MHz; (2)Built–In Matching Network for Broadband Operation Using Double Match Technique; (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (4)Gold Metallization System for High Reliability Applications.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2N6439 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
2N6400 |
THYRISTOR SCR 16A 50V TO-220AB |
Data Sheet |
Negotiable |
|
||||||||||||||
2N6400G |
ON Semiconductor |
SCRs 50V 16A |
Data Sheet |
|
|
|||||||||||||
2N6401 |
ON Semiconductor |
SCRs 100V 16A |
Data Sheet |
Negotiable |
|
|||||||||||||
2N6401G |
ON Semiconductor |
SCRs 100V 16A |
Data Sheet |
|
|
|||||||||||||
2N6402 |
ON Semiconductor |
SCRs 200V 16A |
Data Sheet |
Negotiable |
|
|||||||||||||
2N6402G |
ON Semiconductor |
SCRs 200V 16A |
Data Sheet |
|
|