Product Summary

The BSM75GB170DN2 is an IGBT Power Module.

Parametrics

BSM75GB170DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1700 V; (2)Collector-gate voltage, RGE = 20 kW, VCGR: 1700V; (3)Gate-emitter voltage, VGE: ± 20V; (4)DC collector current, IC: 110A at TC = 25℃; 75A at TC = 80℃; (5)Pulsed collector current, tp = 1 ms, ICpuls: 220A at TC = 25℃; 150A at TC = 80℃; (6)Power dissipation per IGBT, TC = 25℃, Ptot: 625W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to + 125℃; (9)Thermal resistance, chip case, RthJC: ≤ 0.2 K/W; (10)Diode thermal resistance, chip case RthJCD ≤ 0.63K/W; (11)Insulation test voltage, t = 1min, Vis: 4000 Vac; (12)Creepage distance: 16 mm; (13)Clearance: 11mm.

Features

BSM75GB170DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate; (4)RG on,min = 22 Ohm.

Diagrams

BSM75GB170DN2 diagram

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