Product Summary
The BSP135 is a SIPMOS Small-Signal-Transistor.
Parametrics
BSP135 absolute maximum ratings: (1)Continuous drain current: 0.12 A at TA=25 ℃, 0.10 A at TA=70 ℃; (2)Pulsed drain current: 0.48 A at TA=25 ℃; (3)Reverse diode dv /dt: 6 kV/μs at ID=0.12 A, VDS=20 V, di /dt =200 A/μs, Tj,max=150 ℃; (4)Gate source voltage: ±20 V; (5)ESD sensitivity (HBM) as per MIL-STD 883: Class 1; (6)Power dissipation: 1.8 W at TA=25 ℃; (7)Operating and storage temperature: -55 to 150 ℃; (8)IEC climatic category; DIN IEC 68-1: 55/150/56.
Features
BSP135 features: (1)N-channel; (2)Depletion mode; (3)dv /dt rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
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BSP135 E6327 |
MOSFET N-CH 600V 120MA SOT-223 |
Data Sheet |
Negotiable |
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BSP135 E6906 |
MOSFET N-CH 600V 120MA SOT-223 |
Data Sheet |
Negotiable |
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BSP135 L6327 |
Infineon Technologies |
MOSFET SIPMOS SM-Signal Transistor 600V .02A |
Data Sheet |
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BSP135 L6433 |
Infineon Technologies |
MOSFET SIPMOS SM-Signal Transistor 600V .02A |
Data Sheet |
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BSP135 L6906 |
Infineon Technologies |
MOSFET SIPMOS SM-Signal Transistor 600V .02A |
Data Sheet |
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BSP135 |
Other |
Data Sheet |
Negotiable |
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